Abstract
The next generation of electronic devices requires faster operation velocity, higher storage capacity and reduction of the power consumption. In this context, resistive switching memory chips emerge as promising candidates for developing new non-volatile memory modules. Manganites have received increasing interest as memristive material as they exhibit a remarkable switching response. Nevertheless, their integration in CMOS-compatible substrates, such as silicon wafers, requires further effort. Here the integration of LaMnO3+δ as memristive material in a metal–insulator–metal structure is presented using a silicon-based substrate and the pulsed injection metal organic chemical vapour deposition technique. We have developed three different growth strategies with which we are able to tune the oxygen content and Mn oxidation state moving from an orthorhombic to a rhombohedral structure for the active LaMnO3+δ material. Furthermore, a good resistive switching response has been obtained for LaMnO3+δ-based devices fabricated using optimized growth strategies.
Highlights
Resistive switching (RS) denotes the phenomena occurring in capacitor-like heterostructures, namely memristors, when a non-volatile change of resistance is produced under the effect of an applied current or electric field [1]
We explore a number of different strategies to integrate LMO films on platinized siliconbased devices by PI-MOCVD, overcoming the challenge of the high temperatures required for their deposition
We present the optimisation of the temperature and number of pulses using a fixed pressure of 5 Torr, a gas mixture composed of Ar 50% and O2 50% during the deposition step, a pulse injection frequency of 2.5 Hz, and an opening time of the valve of 2 ms
Summary
Resistive switching (RS) denotes the phenomena occurring in capacitor-like heterostructures (metal–insulator/semiconductor–metal, MIM), namely memristors, when a non-volatile change of resistance is produced under the effect of an applied current or electric field [1]. We explore a number of different strategies to integrate LMO films on platinized siliconbased devices by PI-MOCVD, overcoming the challenge of the high temperatures required for their deposition.
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