Abstract
AbstractWe report on the successful integration of a single InGaN quantum dot sheet into a resonant half cavity structure con‐sisting of an AlGaN/GaN distributed Bragg reflector and a GaN λ‐cavity layer. For reference, small‐diameter pillar mi‐crocavites fabricated by focused‐ion beam etching from an empty planar cavity are studied. These structures exhibit discrete transversal modes and Q factors of 260. The quantum dot active region has been grown by metal‐organic vapour‐phase epitaxy using a two‐step deposition technique. Optical spectra measured by micro‐photoluminescence reveal distinct spectrally sharp emission lines around 2.73 eV which can be attributed to the emission of single InGaN quantum dots. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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