Integration of III-V and Si CMOS Devices by Molecular Beam Epitaxy

Abstract

Heterogeneous integration of III-V devices on Si may realize high performance integrated circuits for analog and digital applications. Such integration provides the combined advantages of high volume production of Si-based electronic circuitry with superior high speed performance of III-V components. Various technologies have been implemented to achieve this, from pick and-place die transfer to full wafer bonding to direct growth of III-V's on Si, but all require the implementation of high-quality III-V epilayers on Si CMOS host substrates. This paper presents the current status of various efforts at IQE to realize III-V device performance on Si substrates using molecular beam epitaxy (MBE) crystal growth technology.