Abstract
In this work we describe the gate first integration of gadolinium silicate (GdSiO) high- k dielectrics and metal gate electrodes into SOI n-MOSFETs. Fully functional devices are achieved and compared to reference devices with standard SiO 2. Analysis of electron transport in these gate stacks is performed by specific MOSFET test structures that enable extraction of intrinsic inversion channel mobility. Attractive peak mobilities of 170 cm 2/Vs have been found for GdSiO.
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