Integration of aluminium oxide as a passivation layer in a high efficiency industrial process on n-type silicon solar cells

P Brand,Y Veschetti,V Sanzone,X Pages,R Cabal,K Vanormelingen,P Vermont

doi:10.1109/pvsc.2011.6186127

Integration of aluminium oxide as a passivation layer in a high efficiency industrial process on n-type silicon solar cells

P Brand, Y Veschetti + Show 5 more

https://doi.org/10.1109/pvsc.2011.6186127

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Publication Date: Jun 1, 2011

Affiliation: CEA LITEN, Atomic Energy and Alternative Energies Commission

#N-type Solar Cells #N-type Silicon Solar Cells + Show 8 more

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Abstract

This work aims at evaluating aluminium oxide (Al 2 O 3 ) as an emitter passivation layer for Cz-silicon n-type solar cells fabricated with screen-printed metallization. The effect of firing on the emitter saturation current density obtained with Al 2 O 3 /SiN x was studied and compared to the one obtained with thermal SiO 2 /SiN x . An efficiency of 18.3% was achieved using Al 2 O 3 for n-type solar cells, still limited by a low fill factor due to a high contact resistance.

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