Abstract
Metal–ferroelectric–insulator–semiconductor (MFIS) structures with wide bandgap semiconductors are promising for high temperature, radiation-hard, and high-density memory applications, but the insufficient scalability of perovskite-based ferroelectric thin films and the high cost of conventional wide bandgap semiconductors are the most serious barriers for their practical applications. Here, we integrate highly scalable ferroelectric Hf0.5Zr0.5O2 (HZO) thin films on potentially low-cost bulk $\beta$ -Ga2O3substrates using an Al2O3 buffer layer to form MFIS structures and investigate the microstructural and electrical properties of the HZO thin films and TaN/HZO/Al2O3/ $\beta$ -Ga2O3(−201) MFIS structures. We find that the TaN/HZO/Al2O3/ $\beta$ -Ga2O3(−201) MFIS structure annealed at 550 °C exhibits a memory effect, which is attributed to the ferroelectricity of the HZO thin film. This letter represents the critical first step in the implementation of $\beta$ -Ga2O3in HfO2-based ferroelectric memories.
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