Abstract

Memristor-based crossbar array is one of the most promising structure for in-memory computing platforms. In a crossbar array, material implication logic (IMPLY) can be performed between different word lines or bit lines. Not-material implication (N-IMPLY) can only be performed between the bit lines. This brief demonstrates the feasibility of the execution of N-IMPLY logic between the word lines, followed by an approach for logic gate design in which two logics IMPLY and N-IMPLY are integrated into one crossbar array. Both two logics can be performed between the cells in different rows and columns within the crossbar. Six basic Boolean gates are implemented utilizing the proposed approach, with a lower number of operation steps and memristors compared to the IMPLY-only method. Moreover, a 1-bit full adder is implemented by utilizing the designed logic gates. The performance and area overhead have been improved by the proposed approach, in comparison to the existing methods.

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