Integrating Multiple Resistive Memory Devices on a Single Carbon Nanotube

Abstract

AbstractNano‐objects would be of great interest for the development of new types of electronic circuits if one could combine their nanometer scale with original functionalities beyond the conventional transistor action. However, the associated circuit architectures will have to handle the increasing variability and defect rate intrinsic to the nanoscale. In this context, there is a very fast growing interest for memory devices, and in particular resistive memory devices, used as building blocks in reconfigurable circuits tolerant to defects and variability. It was recently shown that optically gated carbon nanotube field effect transistors (OG‐CNTFETs) based on large assemblies of nanotubes covered by an organic photoconductive thin film can be operated as programmable resistors and thus used as artificial synapses in circuits with function‐learning capabilities. Here, the potential of such approach is evaluated in terms of scalability by integrating and addressing several individually programmable resistances on a single carbon nanotube. In addition, the charge storage mechanism can be controlled at a length scale smaller than the device length allowing to also program the direction in which the current flows. It thus demonstrates that a single nanotube section can combine all‐in‐one the properties of an analog resistive memory and of a rectifying diode with tunable polarity.