Abstract

Si cantilevers with conductive diamond pyramids have recently shown the highest dynamic range in scanning spreading resistance microscopy (SSRM). The use of metal cantilevers would significantly reduce fabrication costs because fewer process steps are required. Furthermore, smaller diamond pyramids, which are commonly sharper, could be used. Therefore, we have developed a procedure for metal cantilevers with diamond pyramids based on a peel-off concept which gives a yield of ∼70%. This paper discusses the fabrication of sharp diamond pyramids and their integration into metal cantilevers. SSRM measurements on Si device structures are presented. A peel-off procedure with higher yield is currently under development.

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