Abstract
Previously we have reported a twin-mesa GaAs-(AlGa)As laser integrated with a passive waveguide, which can be osclllated in a single longitudinal and fundamental transverse mode due to the action of optical injection looking of the frequency.1 However, its threshold current is relatively high. To decrease the threshold current, an integrated twin- planar-stripe GaAs-(AlGa)As laser coupled with a passive waveguide has been devised. Figure 1 shows a schematic diagram of the integrated laser, which contains two active cavity devices A and B coupled with a passive waveguide of 100-μm length. The active device stripes are 10μm wide, 300 μm long, and 0.1μm thick. A reversed p-n junction was adopted for the current confinement.
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