Abstract
The process simplification value of integrated polycide (in-situ doped silicon film integrated with tungsten silicide) is reviewed. The characterization of tungsten and silicon composition in the interface region and its dependence on phosphorus content in the silicon is developed. High concentrations of phosphorus are shown to be a controlling factor driving the composition to be tungsten rich; variations in silane or disilane chemistry and silicon deposition temperature spanning from amorphous as-deposited to polycrystalline are minor factors. With the objective of increasing the interfacial Si:W ratio to improve film quality, we report the extension of Si rich films into the mid E20 atoms/c.c. phosphorus doping range.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
