Abstract
We propose the use of polysilicon thin-film circuits to develop charged particle and neutron detection systems. We detail the methodology to design, fabricate, and implement polysilicon preamplifiers with the requirements for radiation detectors. We demonstrate the combination of polysilicon electronics with Si photodiodes to resolve the spectral response of a 210Po alpha source and demonstrate for the first time neutron detection capabilities. Also, we present the first implementation of a full thin-film radiation detection system using CdS/CdTe detectors and a polysilicon thin-film transistor for single-event charged particle detection.
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