Abstract
The electrical characteristics of devices and circuits realized in CMOS technology on silicon-on-insulator (SOI) substrates and operated at elevated temperatures are presented and compared with results obtained using other materials (bulk Si, GaAs, SiC). It is demonstrated that fully depleted CMOS on SOI is the most suitable process for the realization of complex electronic circuits to be operated in high-temperature environments, up to more than 300/spl deg/C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
