Integrated quantum optical networks based on quantum dots and photonic crystals

Andrei Faraon,Jelena Vučković,Arka Majumdar,Erik Kim,Michal Bajcsy,Dirk Englund

doi:10.1088/1367-2630/13/5/055025

Andrei Faraon, Jelena Vučković + Show 4 more

Open Access

https://doi.org/10.1088/1367-2630/13/5/055025

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Abstract

Single solid-state optical emitters have quantum mechanical properties that make them suitable for applications in information processing and sensing. Most of these quantum technologies rely on the capability to integrate the emitters in reliable solid-state optical networks. In this paper, we present integrated devices based on GaAs photonic crystals and InAs self-assembled quantum dots. These quantum networks are well suited to future optoelectronic devices operating at ultralow power levels, single-photon logic devices and quantum information processing.

Highlights

Nano-photonic devices based on quantum optical effects at the single-emitter and single-photon level represent a fundamental technological limit for the on-chip processing of classical and quantum information [1, 2]
Quantum dots (QDs) coupled to nano-scale optical resonators can be used as simple optical dipoles that can act as efficient light switches or highly nonlinear optical media [4]
For typical parameters found experimentally in GaAs photonic crystal cavities coupled to InAs quantum dots (QDs) (κ/2π = 16 GHz, γ /2π ∼ 0.1 GHz), the normalized transmission function is shown in figure 1

Summary

Introduction

Nano-photonic devices based on quantum optical effects at the single-emitter and single-photon level represent a fundamental technological limit for the on-chip processing of classical and quantum information [1, 2]. For typical parameters found experimentally in GaAs photonic crystal cavities coupled to InAs QDs (κ/2π = 16 GHz, γ /2π ∼ 0.1 GHz), the normalized transmission function is shown in figure 1 What makes this system remarkable is that the presence of the coupled dipole can change the system from fully transparent to opaque even for modest values of the coupling rate g when the system is not in the strong coupling regime [13]. The frequency of the quantum emitter can be controlled using external factors as local electric fields [14] or even other optical fields [15] Another remarkable property of the cavity–QD system is that it exhibits optical nonlinearities at the single photon level. With current state of the art devices, the separation is of the order of the linewidth

On-chip integration

Conclusion