Abstract
A two-input optical NOR gate structure is proposed and demonstrated. The NOR gate is fabricated from a vertically integrated heterojunction phototransistor and light emitting diode InGaAs-InP structure grown by gas source molecular beam epitaxy. Operation up to 500 kHz is demonstrated for devices fabricated with 250- mu m*250- mu m mesas. Analysis indicates that operation at frequencies up to 50-100 MHz is possible for smaller mesa areas. ON/OFF optical contrast ratios as high as 30 were measured. >
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