Abstract
Generally, short-circuit protections for IGBT are provided by the assistance of analogical discrete devices which can sense and protect. In this paper, we present a new NPT IGBT structure with integrated short-circuit protection. This structure is composed of an anode voltage sensor, a delay MOS transistor, a MOS transistor allowing IGBT turn-off and a Zener diode. The structure optimization depends on the flexible technological process developed for power structures and based on the functional integration concept [1]. The protection structure optimization is presented and its functionality is verified by 2D simulations with ISE TCAD.
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