Integrated hybrid III–V/Si laser and transmitter

Abstract

This paper reports on recent advances on integrated hybrid InP/SOI lasers and transmitters. Based on a molecular wafer bonding technique, we develop hybrid III–V/Si lasers exhibiting new features: narrow III–V waveguide width of less than 3 µm, tapered III–V and silicon waveguides for mode transfer. These new features lead to good laser performances: a lasing threshold as low as 30mA and an output power of more than 10 mW at room temperature in continuous wave operation regime from a single facet. Continuous wave lasing up to 70°C is obtained. Moreover, hybrid III–V/Si lasers, integrating two intra-cavity ring resonators, are fabricated. Such lasers achieve a thermal tuning range of 45 nm, with a side mode suppression ratio higher than 40 dB. More recently we demonstrate a tunable transmitter, integrating a hybrid III–V/Si laser fabricated by wafer bonding and a silicon Mach-Zehnder modulator. The integrated transmitter exhibits 9 nm wavelength tunability by heating an intra-cavity ring resonator, high extinction ratio from 6 to 10 dB, and excellent bit-error-rate performance at 10 Gb/s.