Abstract
A novel high-voltage Schottky diode is presented, which allows implementation into Silicon-based power management integrated circuits. The Schottky diode has strongly reduced leakage current at reverse bias and improved forward current under forward bias. Compared to a previous design, the forward resistance at +0.4V is reduced twofold, and at the same time, leakage current in reverse at −25V is reduced by a factor of 30 along with a smaller temperature dependency. The breakdown voltage (BV) of the device is typically >45V in reverse mode. The main element of the novel design is the application of p/n-junctions in parallel to the Schottky metal contact. Further, in forward mode under current surge conditions, the p/n-junctions protect the Schottky diode.
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