Abstract
High-speed Group IV optoelectronics are nowadays a key technology platform for over 100Gbps data communication potentially applied in data centers, high-performance cluster computing, and cloud computing servers. However, unlike III-V compound semiconductors, all these Group-V devices are difficult to be monolithically integrated on the same substrate because of a large lattice mismatch between the elements. A process called rapid melt growth (RMG) method is applied to heterogeneously integrate monocrystalline Ge, Sn on Si substrate. This process doesn't require complex epitaxy process steps to deal with the lattice mismatch issue, and the thermal budget is low, which is potentially compatible with standard CMOS process. Several waveguide-based high-speed Si/Ge/Sn photodetectors are presented, including Si/Ge heterojunction waveguide pin, low-breakdown-voltage Si/Ge SAM avalanche photodiode and GeSn MSM photodetectors.
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