Abstract
A conceptually new method for the measurement of parameters of energy levels in the semiconductor bandgap from 0.07 to 0.4 eV is proposed. The method is based on integrating the relaxing charge of these levels and differentiating the charge integral by modulating the width of the time window of a bias voltage pulse with a small amplitude. The mathematical basis of the proposed method is described. The mathematical relations used allow one to model the temperature spectrum of energy levels. It is demonstrated that the energy position of a deep level may be determined in one temperature scanning pass, thus simplifying the experiments. The energy levels in a green light-emitting-diode structure based on AlGaN/InGaN/GaN were studied experimentally. The ΔEt = 0.14 ± 0.01 and ΔEt = 0.2 ± 0.015 eV levels that presumably belong to VGa and Mg, respectively, were revealed.
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