Integrated device and circuit simulation of deep donor trapping effects in DCFL and SCFL inverters

Tahui Wang Tahui Wang,Sheng-Jyh Wu Sheng-Jyh Wu

doi:10.1109/iscas.1991.176723

Integrated device and circuit simulation of deep donor trapping effects in DCFL and SCFL inverters

Tahui Wang Tahui Wang, Sheng-Jyh Wu Sheng-Jyh Wu

https://doi.org/10.1109/iscas.1991.176723

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Publication Date: Jan 1, 1991

Affiliation: National Yang Ming Chiao Tung University

#Direct-coupled FET Logic Inverter #Source-coupled FET Logic + Show 8 more

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Abstract

An integrated device and circuit simulation has been performed to evaluate the DX-traps-induced performance degradation in direct-coupled FET logic (DCFL) and source-coupled FET logic (SCFL) AlGaAs/GaAs HEMT inverters. The origin of the DX centers are believed to be due to the complexes of donors (D) and the unknown defects (X). The variation of the output pulse width and the hysteretic characteristics of the input-output voltage transfer function in the inverters are modeled. In comparison with the DCFL inverter, this study shows that the DX-traps-incurred transient phenomena are significantly improved in the SCFL inverters. >

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