Integrated circuits using resonant-tunneling hot electron transistors (RHETs)

Abstract

Research activities to improve the DC and RF performance of RHETs are reviewed. A description is given of RHET integrated circuits, including two-input and three-input logic gates. Using these logic gates and new collector barrier structures, a RHET latch circuit and a full adder have successfully been demonstrated at 77 K and require only one half to one quarter of the number of transistors needed for a conventional full adder. >