Abstract
A novel integrated vacuum field emission (VFE) differential amplifier (diff-amp) utilizing carbon nanotube (CNT) emitters has been developed. A dual-mask microfabrication process was employed to achieve a VFE diff-amp by integrating identical CNT VFE transistors with built-in split gates and integrated anodes. The identical pair of triode amplifiers was well-matched in their device characteristics. The measured ac small-signal characteristics of the diff-amp showed a common-mode-rejection ratio (CMRR) of ~ 320 (~ 50 dB). The proposed analytical model of the CMRR was verified to be in good agreement with the experimental data. The successful implementation of the CNT diff-amp demonstrates a new way to achieve temperature and radiation tolerant VFE integrated microelectronics.
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