Abstract
We present high-speed, traveling-wave (TW) Si Mach–Zehnder modulators and Si sub-bandgap photodetectors (SBPD) monolithically integrated on an Si-only photonics platform without incorporation of Ge epitaxial growth process. Through constructing a detailed equivalent circuit model on the components, we design the device structure and TW electrodes for operating the device with bandwidth beyond 40 GHz. The experimental results show the 3-dB bandwidths of the Si modulator and photodetectors are 35 and 44 GHz, respectively, generally agreeing well with our design. The measured photoresponsivity of the SBPD varies from 0.1 A / W to nearly 1 A / W, depending on the bias voltage. These two components potentially can be utilized for an integrated optical transceiver operating for 50 Gbit / s data transmission.
Highlights
With the advent of 5G mobile network in recent years, the demand for high-speed data transmission has increased significantly
About 400 Gb∕s multi-channel Si photonics optical transceivers utilized in data centers have been demonstrated in 2019.1 All the passive and active optical components are monolithically integrated on a single chip and are fabricated through a CMOS-compatible process
The Si TW Mach–Zehnder modulator (TW-MZM) and TW-sub-bandgap photodetectors (SBPD) are analyzed via a modified equivalent circuit model referred in paper[11] with key device parameters calculated by Synopsys Sentaurus TCAD
Summary
With the advent of 5G mobile network in recent years, the demand for high-speed data transmission has increased significantly. To implement a complete optical function on a Si photonics chip, several key optical components are required, including lasers, modulators,[2] photodetectors,[3] multiplexers/demultiplexers,[4,5] and filters. Among these components, lasers made of III–V semiconductor compound are usually demanded. Lasers made of III–V semiconductor compound are usually demanded They are either packaged[6] or bonded and processed[7] on as-patterned Si structures to make light sources since Si is an indirect bandgap semiconductor with low radiation efficiency. To improve the operating speed, a traveling-wave (TW) type
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