Abstract

A combined planar lossless optical amplifier and 1 × 2 power splitter device has been realized in Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> :Er <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup> on silicon. Net internal gain was measured over a wavelength range of 40 nm across the complete telecom C-band (1525-1565 nm). Calculations predict net gain in a combined amplifier and 1 × 4 power splitter device over the same wavelength range for a total injected pump power as low as 30 mW.

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