Integrated 32 × 32 pyroelectric ir sensor array in nmos/jfet circuitry using highly (001) oriented pzt thin films on epitaxial y-al2o3/si substrates

N Kawazu,D Akai,K Kikuchi,M Ishida,K Sawada

doi:10.1109/isaf.2008.4693727

Integrated 32 × 32 pyroelectric ir sensor array in nmos/jfet circuitry using highly (001) oriented pzt thin films on epitaxial y-al2o3/si substrates

N Kawazu, D Akai + Show 3 more

https://doi.org/10.1109/isaf.2008.4693727

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Publication Date: Feb 1, 2008

Citations: 1

Affiliation: Toyohashi University of Technology

#Si Substrates #Thermal Isolation Structure + Show 8 more

Abstract
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Abstract

Integrated 32 × 32 pyroelectric IR sensor array in nMOS/JFET circuitry using highly (001) oriented Pb(Zr0.4, Ti0.6)O3 (PZT) thin films on epitaxial y-Al2O3/Si substrates has been fabricated on the one chip. The sensor array utilizes a sol-gel deposited PZT(001) thin film as a pyroelectric material, an n-JFET as a low noise detection device, and a micromachined membrane supported by four beams as a thermal isolation structure on epitaxial Pt(001)/y-Al2O3(001)/Si(001) substrates.

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