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Abstract
Graphene has unique electrical and mechanical properties which can pave the way for new types of devices for microwave applications. However, emerging technologies often have problems with yield and still considerable variation in device parameters cause great challenges for circuit design. In this paper, we present the design and development of an integrated graphene FET amplifier addressing this challenge. A representative graphene FET was selected from a set of devices and then the input and output matching circuits were designed using the negative-image technique. The two-finger GFET with a gate length of 0.5 μm exhibit a typical f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> and f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> of 35 GHz and 37 GHz, respectively. The integrated graphene FET amplifier was fabricated on a high-resistivity silicon substrate together with thin film capacitors, airbridges, and spiral inductors. A record high gain of 4.2dB at 10.6GHz was measured for a single transistor amplifier stage and agrees well with simulations. These results indicate significant progress towards active microwave circuits based on emerging 2D materials.
Highlights
Since the first top-gated graphene field-effect transistors (GFETs) demonstrated by Lemme et al in 2007 [1], the microwave performance of GFETs has improved significantly in recent years [2]
The power gain in such amplifiers is limited due to inherent challenges associated with the zero bandgap in graphene that results in poor current saturation
The yield of the GFET process was determined from optical inspection and initial I-V measurements to be circa 75%
Summary
Since the first top-gated graphene field-effect transistors (GFETs) demonstrated by Lemme et al in 2007 [1], the microwave performance of GFETs has improved significantly in recent years [2]. Several graphene RF/microwave circuits have been reported. This includes frequency converters [3], phase shifters [4], power detectors [5]– [7], multiplier [8], rectifier [9], as well as microwave amplifiers [10]–[13]. The power gain in such amplifiers is limited due to inherent challenges associated with the zero bandgap in graphene that results in poor current saturation.
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