Integer quantum Hall effect on hydrogen-passivated silicon (1 1 1) surfaces

K Eng,R.N Mcfarland,B.E Kane

doi:10.1016/j.physe.2006.03.069

Integer quantum Hall effect on hydrogen-passivated silicon (1 1 1) surfaces

K Eng, R.N Mcfarland + Show 1 more

https://doi.org/10.1016/j.physe.2006.03.069

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Journal: Physica. E, Low-dimensional systems & nanostructures	Publication Date: Apr 18, 2006
Citations: 8

Affiliation: University of Maryland, College Park

#Integer Quantum Hall Effect #Hydrogen-passivated Silicon + Show 8 more

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Abstract

We report magnetoresistance measurements of a high-mobility two-dimensional electron system induced on a hydrogen-passivated Si(1 1 1) surface. At temperatures of T = 150 mK and magnetic fields up to 12 T, signatures of the integer quantum Hall effect with the lowest Landau filling factor of 2 have been observed.

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