Abstract
Insulator-quantum Hall conductor transitions at low magnetic field B were studied with a gated GaAs-AlGaAs heterostructure. A low field disorder-magnetic field phase diagram was constructed based on the experimental results. This phase diagram shows no floating up of the extended state and allows transitions from the insulating state directly to any Landau level states. The critical filling factor can change from 16 to 6 as the disorder in the sample increases. By inspecting the raw data from this and the other samples and analyzing the scaling behaviors near the transition points, we found that the observed transition has the properties of a genuine phase transition.
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