Abstract
We present a study of the electrical resistivity of the intermediate valence narrow-gap semiconductor SmB 6 at temperatures between 1.6 and 80 K and under pressure up to 70 kbar. We observe a pressure induced transition from a non-magnetic heavy fermion insulator to a metallic heavy fermion liquid at “quantum” critical point p cr≈40 kbar. In the insulating phase a continuous suppression of the gap under pressure was derived. Slightly above p cr a non-Fermi-liquid region was observed.
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