Abstract
SNOS capacitors, which have a polycrystalline silicon gate and a nitride‐oxide gate insulator, are fabricated using a wide range of insulator thicknesses and high temperature anneals. The insulator charge depends on the oxide and nitride thickness, and the charge level is most sensitive to the final annealing step before metallization. A premetal anneal in H2 is required to produce a low fast state density. shifts under bias‐temperature stress result from charge accumulation at the nitride‐oxide interface.
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