Abstract
We investigated the electronic structures of strongly correlated metallic LaNiO3 (LNO) and semiconducting Nb-doped SrTiO3 (Nb:STO) heterostructures by varying the LNO film thickness using in situ photoemission spectroscopy. We found that, contrary to other interfaces with SrTiO3 and LaAlO3, insulating LNO layers are formed between metallic LNO layers and Nb:STO. Such behavior seems to be related with an electron transfer from Nb:STO to LNO due to Schottky-barrier formation at the interface.
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