Abstract
In this paper, a new monolithic MOS controlled power transistor structure called the Insulated Gate P-I-N Transistor (IGPT) is described for the first time and its operation is verified by two-dimensional numerical simulation. IGPT achieves an on-state voltage drop similar to that of a PIN diode, yet also provides insulated gate turn-off capability up to several thousand amperes per centimeter square. The turn-off of the IGPT is achieved by the MOS depletion of a high level injection region, verified also for the first time. IGPT is therefore a very attractive device to be used in high power switching applications because it is superior to current generation power devices such as the Insulated Gate Bipolar Transistor (IGBT) and MOS Controlled Thyristor (MCT). >
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