Abstract

The development of X-ray fluorescence analysis of light elements (e.g. O, C, B and Be) has been carried out for many applications. Recently, the revolutional expansion of semiconductor electronic and memory devices has roused the needs of analysis and identification of the surface and the single- and multi-layered film structure in devices, using the fundamental parameter method for the soft and ultrasoft X-ray region. From the view point of the extensive studies of soft and ultrasoft X-ray measurements.

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