Abstract
In this study, we report on the investigation of a β-γ-anticoincidence set up for the determination of phosphorus in silicon for photovoltaics by Instrumental Neutron Activation Analysis. For the suppression of disturbing β/γ radiation emitted by impurities, a plastic scintillator for β-detection is surrounded by a well type NaI(Tl) γ-detector. A suppression of 40 % for the impurities 60Co and 124Sb could be achieved. The limit of detection was determined to be less than 0.1 ppm. In order to correct different β absorption, dedicated Geant4 simulations were used. With first quantitative measurements the phosphorus concentration in silicon could be determined.
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