Abstract
Electrical threshold switching characteristics are reported for a bulk, two-terminal chalcogenide device. In addition to a simple load line instability, a more abrupt switching transition is observed, which is identified as an intrinsic instability, associated with the formation of a current channel. Thermally controlled current channelling is discussed in relation to bulk and thin-film devices and emphasis is given to some consequences of channel constriction at the electrode interface in thin-film devices. A simple analysis of the constriction yields a minimum holding voltage of the same order as is observed in thin-film devices.
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