Abstract
CuIn(S1−x,Sex)2 (CISSe) films aimed at flexible solar cells were directly prepared on Ti foils from elemental In, Cu, S, and Se particle precursor using microwave irradiation. The formation of the CISSe phase was deduced from X-ray diffraction (XRD) patterns. The (112) peaks of CISSe were well defined and the lattice constants increased in direct proportion to the S/(S+Se) ratio almost satisfying Vegard's law. In particular, CuInSe2 was formed in the desired chalcopyrite lattice as indicated by the presence of (101), (103) and (211) peaks in the XRD pattern. Porous surfaces and formation of by-products were avoided by employing an evaporated In and Cu films instead of In and Cu particles.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
