Abstract
The instability of the homogeneous state in a ferromagnetic semiconductor is studied. The electronic part of the free energy is determined using Thomas-Fermi statistical model and the magnetic part is calculated by the molecular field approximation including the RKKY-interaction. The inhomogeneity consists of a small magnetically polarized region with a high electron density surrounded by a less polarized positively charged depletion layer. The inhomogeneous state is found to be stable in a relatively broad temperature range around the Curie temperature at low and intermediate doping densities. The stability range shrinks in an applied magnetic field. At fields exceeding about 3 T or at doping densities larger than 1021 cm-3 the inhomogeneous state is no more stable.
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