InSnZnO Thin-Film Transistors With Nitrogenous Self-Assembled Multilayers Passivation

Abstract

Nitrogenous octadecylamine (ODA) self-assembled multilayers (SAMs) are prepared as passivation layers by the vapor-phase process for amorphous InSnZnO (ITZO) thin-film transistors (TFTs). The vapor-phase proposed ODA SAMs show excellent properties as a barrier against the atmosphere and serve as an effective nitrogen doping (N doping) source. After the self-assembled process, the distribution of the oxygen vacancies is modified by N-doping in the channel of the ITZO TFTs, wherefore the ITZO TFTs with ODA SAMs demonstrate an improvement of electrical properties. In addition, the oxygen and water adsorption/desorption reactions at the back channel are suppressed by the atmosphere isolation and N-doping effect, leading to an improvement of the positive bias stability. These results indicate that the nitrogenous ODA SAMs can be likely passivation layers for high-performance oxide TFT devices.