InSnO:N homojunction thin-film transistors fabricated at room temperature

Abstract

Nitrogen-doped indium tin oxide (ITON) thin films of different thicknesses were deposited by radio frequency magnetron sputtering. The crystallinity, surface morphologies, and chemical compositions of the thin films were found to be influenced by film thickness, and changes in these factors eventually caused changes in the conductivity of the thin films. Therefore, we used ultrathin ITON thin films as channels and an 85-nm-thick ITON as the source/drain electrodes to fabricate thin-film transistors. The optimal device fabricated at room temperature (∼25 °C) has a threshold voltage of −2.5 V and a field-effect mobility of 10.31 cm2/(V∙s).