In-situ surface technique analyses and ex-situ characterization of Si1-xGex epilayers grown on Si(001)-2 ×1 by molecular beam epitaxy

Abstract

Si 1-x Ge, epilayers grown by Molecular Beam Epitaxy on Si(001) at 400 o C have been analyzed in-situ by surface techniques such as X-ray and Ultraviolet Photoelectron Spectroscopies (XPS and UPS), Low Energy Electron Diffraction (LEED) and photoelectron diffraction (XPD). The Ge surface concentrations (x) obtained from the ratios of Ge and Si core level intensities are systematically higher than those obtained by the respective evaporation fluxes. This indicates a Ge enrichment in the first overlayers confirmed by Ge-like UPS valence band spectra. The structured crystallographic character of the epilayers is ascertained by LEED and XPD polar scans in the (100) plane since the Ge Auger LMM and the Si 2p XPD intensity patterns from the Si 1-x Ge x epilayers are identical to those of the Si substrate. The residual stress in the epilayer is determined by ex-situ X-ray diffraction (XRD) which also allows, as Rutherford Back Scattering (RBS), Ge concentration determinations