Abstract
Growth of CuO nanowires by annealing method has been studied in-situ by grazing incidence Energy Dispersive X-ray Diffraction (EDXRD) technique on Indus-2. It was observed that Cu slowly oxidized to Cu2O and finally to CuO. The data was taken as a function of time at two annealing temperatures 500°C where nanowires form and 300°C where nanowires don’t form. We found that the strain in the CuO layer may be a principal factor for the spontaneous growth of nanowires in annealing method.
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