In situ spectroscopic ellipsometry studies of hydrogen ion bombardment of crystalline silicon

Abstract

Hydrogen-bombardment induced damage in single crystal silicon as a function of the substrate temperature, ion energy, and ion dose was studied using in situ spectroscopic ellipsometry over the photon energy range 2.0–5.5 eV under high vacuum conditions. The incident hydrogen ion energies were 300 and 1000 eV, and the doses were 1015–1018 ions/cm2. In situ spectroscopic ellipsometry results showed that the damage layer thicknesses for the samples bombarded at elevated temperatures are smaller than for samples bombarded at room temperature and subsequently annealed at the same elevated temperature. The diffusion coefficient for hydrogen in silicon of 6 × 10−15 cm−2/s was obtained from the in situ spectroscopic ellipsometry data.