Abstract

Summary form only given. In-situ doping of semiconductor films by chemical vapor deposition (CVD) permits precise tailoring of dopant profiles with less surface damage than ion implantation. However, noninvasive in-situ monitors which are sensitive to dopant parameters are lacking. In this paper we show that second-harmonic (SH) spectroscopy provides a sensitive in-situ monitor of CVD boron-doping of Si[001]. The sensitivity originates from space charge fields associated with the electrically active dopants, which cause electric-field-induced second-harmonic (EFISH) generation, thus enhancing and spectrally altering SH signals.

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