Abstract
The deformation behavior of the epitaxial TiN/MgO (001) thin film/substrate system was studied through in-situ nanoindentation in a transmission electron microscope (TEM). The required sample geometry was prepared using Ga+ focused ion beam (FIB) etching. During room-temperature indentation, both the TiN film and the MgO substrate deformed through the motion of dislocations. The result was a localized hemispherical plastic zone in the TiN film directly under the indentation contact area, forming an 8° tilt boundary. These results show directly that small-scale plasticity in TiN can occur at room temperature through the motion of dislocations.
Published Version
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