Abstract
Self-heating effect (SHE) in aggressively scaled SOI FinFETs is experimentally and quantitatively investigated by utilizing a sub-nanosecond (ns) characterization technique. A 3D mapping of the channel temperature rise is obtained under different heating (the transistor is turned ON with a current flowing through the channel) and cooling (the transistor is turned OFF) time ranging from 500 ps to 10 μs. It is observed that SHE could be alleviated or almost totally suppressed when the heating time is small enough and the cooling time is reasonably long. Furthermore, for the first time, the real-time channel temperature is electrically monitored with a sub-nanosecond resolution during the whole stress phase. Thus, the hot carrier degradation (HCD) lifetime can be precisely projected no matter SHE exists or not during the stress phases of HCD stress. In addition, the impact of SHE during HCI stress is also simulated in the real digital circuit applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
