Abstract
Light scattering has been used to detect changes in surface topography during removal of substrate surface oxide and initial deposition of silicon films. The scattered intensity is interpreted by reference to XPS, TMS, SIMS and TEM measurements. The scattering signal observed during oxide removal depends on the chemical nature of the oxide, while that observed during initial film growth is sensitive to substrate temperature and to the nature of residual surface contamination. An intense peak occurs during initial growth above 700–750°C on (100) Si and above 800–840°C on (111) Si, and is accounted for by a temperature-dependent interaction of residual surface contaminants with the lateral flow of growth steps.
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