Abstract
High quality amorphous silicon nitride films have been deposited, without substrate heating, using a sputtering-type electron cyclotron resonance (ECR) microwave plasma. The compositional and structural characterizations have been made by means of a Fourier transform infrared (FT-IR) spectrometer and an ellipsometer. The correlation between the microstructure of a-Si x N y films and nitrogen gas fraction relative to argon ( N 2 Ar ) is discussed. In-situ Fourier transform infrared reflection absorption spectroscopy (ISFT-IRRAS) has been used to study the properties of a-Si x N y Si interface. The results from ISFT-IRRAS monitoring indicate that the broadening of a SiN stretching vibration mode, induced by interface stress, decreases with increased film thickness.
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