In-situ HVEM study of dopant dependent (113)-defect generation in silicon during 1-MeV electron irradiation.

Abstract

By high flux, high energy electron irradiation in the temperature range between 200 and 900K lattice defects with (113) habit planes are generated in silicon. The required experimental conditions to form (113)-defects can easily be obtained by electron irradiation of thin silicon foils in a high voltage transmission electron microscope (HVEM). In this communication, results are presented of an in-situ study of the effect of dopant concentration profiles on the (113)-defect generation in silicon, using 1-MeV electron irradiation in a HVEM. The (113)-defect nucleation and growth is studied as a function of the irradiation conditions and of the dopant type and concentration profile. The observation are interpreted on the basis of well-known point defect reactions and are correlated with data obtained on electron irradiated, homogeneously doped silicon by Fedina and Aseev (1990).