Insights to the influences of electroforming process on resistive switching types in Pt/InGaZnO/W memory device

Abstract

This work examined carefully the electrical performance of Pt/InGaZnO/W memory device and found the co-existence of volatile and non-volatile resistive switching effects dependent on the electroforming process. The Pt/InGaZnO/W device exhibited stable and volatile switches without electroforming process, which were originated from electron trapping and detrapping in intrinsic defects of InGaZnO thin films. However, after electroforming process, the device showed non-volatile bipolar resistive switching properties with high reliability including long retention, good endurance and concentrated switching voltages. On the basis of the resistance temperature dependence and the change of chemical states, the non-volatile resistive switching effects were explained by the formation and rupture of oxygen vacancies related filament. This study provides new insights into the effects of electroforming process and defect types on resistive switching behaviours.